power transistors 285 2sd1267, 2SD1267A silicon npn triple diffusion planar type for power amplification complementary to 2sb0942 and 2sb0942a features ? high forward current transfer ratio h fe which has satisfactory linearity ? low collector to emitter saturation voltage v ce(sat) ? full-pack package which can be installed to the heat sink with one screw absolute maximum ratings t c = 25 c 1: base 2: collector 3: emitter eiaj: sc-67 to-220f-a1 package unit: mm electrical characteristics t c = 25 c parameter symbol rating unit collector to base 2sd1267 v cbo 60 v voltage 2SD1267A 80 collector to 2sd1267 v ceo 60 v emitter voltage 2SD1267A 80 emitter to base voltage v ebo 5v peak collector current i cp 8a collector current i c 4a collector power t c = 25 cp c 40 w dissipation t a = 25 c2 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector cutoff 2sd1267 i ces v cb = 60 v, v be = 0 400 a current 2SD1267A v cb = 80 v, v be = 0 400 collector cutoff 2sd1267 i ceo v ce = 30 v, i b = 0 700 a current 2SD1267A v ce = 60 v, i b = 0 700 emitter cutoff current i ebo v eb = 5 v, i c = 0 1 ma collector to emitter 2sd1267 v ceo i c = 30 ma, i b = 0 60 v voltage 2SD1267A 80 forward current transfer ratio h fe1 * v ce = 4 v, i c = 1 a 70 250 h fe2 v ce = 4 v, i c = 3 a 15 base to emitter voltage v be v ce = 4 v, i c = 3 a 2 v collector to emitter saturation voltage v ce(sat) i c = 4 a, i b = 0.4 a 1.5 v transition frequency f t v ce = 5 v, i c = 0.5 a, f = 1 mhz 20 mhz turn-on time t on i c = 4 a, i b1 = 0.4 a, i b2 = ? 0.4 a, 0.4 s storage time t stg v cc = 50 v 1.5 s fall time t f 0.5 s note) * : rank classification rank q p h fe1 70 to 150 120 to 250 10.0 0.2 5.5 0.2 7.5 0.2 16.7 0.3 0.7 0.1 14.0 0.5 solder dip (4.0) 0.5 +0.2 0.1 1.4 0.1 1.3 0.2 0.8 0.1 2.54 0.3 5.08 0.5 2 13 2.7 0.2 4.2 0.2 4.2 0.2 3.1 0.1
power transistors 286 2sd1267, 2SD1267A v ce(sat) ? i c h fe ? i c f t ? i c p c ? t a i c ? v ce i c ? v be area of safe operation (aso) r th(t) ? t 0 160 40 120 80 140 20 100 60 0 50 40 30 20 10 (1) t c =ta (2) with a 100 100 2mm al heat sink (3) with a 50 50 2mm al heat sink (4) without heat sink (p c =2w) (1) (2) (3) (4) ambient temperature t a ( ? c ) collector power dissipation p c ( w ) 020 16 412 8 0 6 5 4 3 2 1 i b =150ma t c =25 ? c 100ma 80ma 60ma 40ma 30ma 20ma 10ma 5ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 02.4 2.0 1.6 0.4 1.2 0.8 0 8 6 2 5 7 4 1 3 v ce =4v t c =100 ? c 25 ? c 25 ? c base to emitter voltage v be ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 t c =100 ? c 25 ? c 25 ? c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce =4v t c =100 ? c 25 ? c 25 ? c collector current i c ( a ) forward current transfer ratio h fe 0.01 0.1 1 10 0.03 0.3 3 1 3 10 30 100 300 1000 3000 10000 v ce =10v f=1mhz t c =25 ? c collector current i c ( a ) transition frequency f t ( mhz ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 non repetitive pulse t c =25 ? c i cp i c 10ms dc t=1ms 2sd1267 2SD1267A collector to emitter voltage v ce ( v ) collector current i c ( a ) 10 4 10 10 3 10 1 10 2 110 3 10 2 10 4 10 2 10 1 1 10 10 3 10 2 (1) without heat sink (2) with a 100 100 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ? c/w )
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